Description of the reactor (cvd) the reactor is an equipment that has been used to deposit pure and high-quality thin films for nanotechnology by chemical vapor deposition process in which the chemical precursors react in the vapor phase near or on a heated substrate typically in a vacuum. the precursor flows are engineered keeping in mind the thermodynamics of the chemical reactions. design starts designing the gas-delivery system. the system must be both effective and safe since several of the precursors are toxic and dangerous. nanostructured semiconducting metal-oxides (mos) have very interesting applications for low-cost solar cells, high-performance gas, and bio-sensors, functional iot nodes, pollution mitigation, power conversion, etc. in this project, we have built a novel, indigenously designed, and fully-functional chemical vapor deposition (cvd) reactor that is capable of deposition device quality semiconducting thin films (fig 1 and 2). this reactor can be used in research, to deposit high-quality thin film deposition for aerospace engineering, semiconductors, solar cells, smart glass, carbon nanotubes, nanowires, graphene, leds, mems, and other applications. through its application laboratory, research institutes/industries provides process development support and process startup assistance with the focus on enabling tomorrow’s technologies. the work in the novel not only because the system has some unique capabilities but also because a fully-functional oxide cvd system deposition was designed, built and commissioned in just 1 year. oxide semiconductors are very interesting and upcoming candidates for more-than-moore devices. oxide semiconductors demonstrate almost every optical and electrical property known to science, e.g. superconductivity, ferroelectricity, giant-magnetoresistance, piezoelectricity, etc. so virtually any type of device can be fabricated on oxides. still, the integration of semiconducting oxides with transitional electronics fabrication has not yet happened (oxides are only used in a very narrow role of insulators). part of the reason is that existing deposition techniques are either not scalable, expensive or lead to poor-quality films. one way to improve film quality is to deposit oxide using chemical vapor deposition (cvd), which is known to deposit a defect-free high-quality high-performance thin-film with precise control. however, oxide-cvd is still an immature technology due to the poor library of precursors, and lack of good deposition reactors. in this project, we have developed an in-house cvd reactor to deposit semiconducting oxide thin films. what’s new? this reactor has been built over a period of 12 months with an investment of ~30 lakhs. for comparison, the market price for a comparable system will be more than 2 cr. furthermore, commercial cvd equipments are always imported with little indigenous intellectual input. the low-cost and indigenous design of the reactor is itself an innovation. it will encourage research in oxides and possibly seed an equipment manufacturing industry in india. oxide semiconductors are limited by the quality of deposited films. using cvd, instead of conventional techniques, leads to films with a lower concentration of defects and better devices. also, by careful selection of precursors, the cvd reactor can deposit high-quality oxide films at a much lower temperature than state-of-art. the low temperature allows us to use a wide variety of substrates like flexible/transparent polymer which opens the door of many other applications such as transparent lcd panels, transparent electronic devices and foldable mobile phones which are only concepts till now.